For the passive Q-switched microchip laser, the jitter of the output signal and the external trigger signal is less than 10 μ s. The laser can be used alone or as seed source of laser amplifier. At the same time, the laser amplifier of our company can be used to amplify the energy to tens of mJ. At the same time, the wavelength can be extended to 532nm, 355nm, 266nm, etc. The product has the advantages of good beam quality, high peak power, reliable performance, compact structure, simple operation and maintenance. Combined with excellent production technology, this series of products can meet the requirements of airborne, vehicle mounted, high and low temperature and other harsh environments.
Main features of this series of lasers:Sub-nanosecond, high peak power;High beam quality;High stability and compact structure;Strong environmental adaptability, working at -20 ~ 60 ℃;1064nm, 532nm, 355nm wavelength optional;Typical application;Lidar;Laser micromachining;Nonlinear spectroscopy;Terahertz generation.
|Energy @1064nm||> 1200μJ||> 240μJ||> 400μJ|
|Energy Stability||< 3%||< 3%||< 3%|
|Pulse Width||< 1.5ns||< 1.5ns||< 1.5ns|
|Cooling Method||Air Cooling||Air Cooling||Air Cooling|
|Output Power||< 50W||< 80W||< 100W|
|Laser Weight||< 10kg||< 12kg||< 15kg|
- Structural design of passive Q-switched microchip
- Narrow pulse width, high peak power
- High stability and compact structure
- Integrated photodetector